| Customization: | Available |
|---|---|
| Type: | Alloy Target |
| Certification: | TUV, ISO, CE |
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Aluminum Silicon Sputtering Targets are produced by melting technology, usually used for IC application. By adding small amount of silicon and copper metals, aluminium interconnects' electromigration and diffusion to wafer can be improved effectively, and service life can be raised greatly. Aluminum Silicon Copper AlSiCu 98.5/1/0.5wt% Sputtering Targets are adopted for ULVAC, ANEALVA and Varian sputtering machines. With up to 4N purity, uniform grain size, lower oxygen content, end user can obtain constant erosion rates as well as high purity and homogeneous thin film coating during PVD process.
Features
Chemical Composition: AlSi 99/1wt%, AlSiCu 98.5/1/0.5wt%, AlSi 90/10wt%, AlSi75/25wt%, AlSi50/50wt%, AlSi25/75wt%, other composition can be customized
Segregation of weight: +/-0.2wt%
Available Purity: 3N, 4N
Production Technology: melting
Shapes: planar targets
Average Grain Size: < 300um, structure of fine grains can be customized
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