Customization: | Available |
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Type: | Metal Target |
Certification: | TUV, ISO, CE |
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Silicon/Si Sputtering Target
Silicon sputtering target, as a very important functional materials, it mainly used for depositing SiO2, Si3N4 and other deelectric layer by magnetic sputtering process. Those thin films are characterized by excellent hardness, optic, dielectric properties, wear and corrosion resistance, which are widely applied to the field of LCD transparent conducting glass, LOW-E building glass and micro-electronics.
Features
Type: poly-crystalline or mono-crystalline
Purity: 5N, 6N
Available shape: Planar, Rotary
Growth method: Czochralski (CZ)
Density:2.33g/cm3
Conductivity type: P type (Boron doped) & N type (phosphorus doped)
Dimension:
length:300mm max
width:150mm max
diameter:300mm max
thickness:3-12mm
tolerance:±0.1mm
Specific resistance:0.005-0.02 ohm.cm
1-10 ohm.cm
10 ohm.cm min
Planeness (TIR): < 1.2μm
Partial planeness (STIR): <0.3μm
Warp: <30μm