99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine

Product Details
Customization: Available
Type: Silicon Target
Shape: Round

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  • 99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine
  • 99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine
  • 99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine
  • 99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine
  • 99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine
  • 99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine
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Basic Info.

Model NO.
XK-Si
Certification
TUV, ISO, CE
Purity
99.999%
Size
Customized
MOQ
1 PC
Free Sample
Accept
Packing
Wooden Case
Certificate
Provide for Each Target
Transport
by Air
Delivery
5-10 Days
Material
Silicon
Transport Package
Vacuum Sealed
Specification
customized
Trademark
no
Origin
China
HS Code
8486909900
Production Capacity
1000 PCS/Year

Product Description

                  Thin film coating materials silicon/Si sputtering target 
 

Silicon/Si Sputtering Target

Silicon sputtering  target, as a very important functional materials, it mainly used for depositing SiO2, Si3N4 and other deelectric layer by magnetic sputtering process. Those thin films are characterized by excellent hardness, optic, dielectric properties, wear and corrosion resistance, which are widely applied to the field of  LCD transparent conducting glass, LOW-E building  glass and micro-electronics.
99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine

Features

Type: poly-crystalline or mono-crystalline

Purity: 5N, 6N

Available shape: Planar, Rotary

Growth method: Czochralski (CZ)

Density:2.33g/cm3

Conductivity type: P type (Boron doped) & N type (phosphorus doped)

Dimension:

length:300mm max

width:150mm max

diameter:300mm max

thickness:3-12mm

tolerance:±0.1mm

Specific resistance:0.005-0.02 ohm.cm

                              1-10 ohm.cm

                              10 ohm.cm min 

Planeness (TIR): < 1.2μm

Partial planeness (STIR): <0.3μm

Warp: <30μm  

99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine
99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine99.999% Sputter/Sputtering Target Poly Crystal Silicon for Sputtering Machine

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